advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v fast switching characteristic r ds(on) 0.6 simple drive requirement i d 10a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 0.72 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice linear derating factor 10 40 174 10 6.3 50 1.39 -55 to 150 parameter ap10n70r/p 30 rating 600 rohs-compliant product 201022073-1/4 storage temperature range -55 to 150 parameter g d s to-262(r) g d s to-220(p) the to-220 and to-262 package is widely preferred for commercial- industrial applications. the device is suited for switch mode power supplies, dc-ac converters and high current high speed switching circuits. g d s a p10n70 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications.both to-220 and to-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1.0ma 600 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =5.0a - - 0.6 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =5a - 5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =10a - 35.9 57 nc q gs gate-source charge v ds =480v - 8.3 - nc q gd gate-drain ("miller") charge v gs =10v - 11.5 - nc t d(on) turn-on delay time 3 v dd =300v - 14.9 - ns t r rise time i d =10a - 19.7 - ns t d(off) turn-off delay time r g =10 ? v gs =10v - 51.7 - ns t f fall time r d =30 - 23.3 - ns c iss input capacitance v gs =0v - 1950 3120 pf c oss output capacitance v ds =15v - 630 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf r g gate resistance f=1.0mhz - 2 3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 t j =25 : , i s =10a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =10a, v gs =0 v , - 575 - ns q rr reverse recovery charge di/dt=100a/s - 10.6 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1.0mh , r g =25 , i as =10a. 3.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. ap10n70r/p 2/4 this product has been qualified for consumer market. applications or uses as criterial component in life support
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap10n70p/r 0.8 0.9 1 1.1 1.2 1.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 16 20 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.0v 4.5v v g =4.0v 0.8 1.2 1.6 2 2.4 2.8 3.2 25 50 75 100 125 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v g =10v 0 4 8 12 16 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 6.0v 5.0v 4.5v v g = 4.0v 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap10n70p/r 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 1s 100us 1ms 10ms 100ms 0 4 8 12 16 0204060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =320v v ds =400v v ds =480v 1 100 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge dc
package outline : to-262 millimeters min nom max a 4.24 4.44 4.64 a1 ----- ----- 2.70 b 0.66 0.76 0.86 b1 1.07 1.27 1.47 b3 0.76 0.86 1.06 c 0.30 0.40 0.50 c1 1.15 1.30 1.45 d 8.30 8.60 8.90 e 9.90 10.20 10.50 e 2.04 2.54 3.04 l 10.50 11.00 11.50 l1 9.50 10.00 10.30 l3 ---- 1.30 ---- l4 10.80 11.30 11.35 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-262 symbols advanced power electronics corp. e b b1 e d l3 l4 l1 l2 b3 a1 a c1 c l part numbe r 10n70r ywwsss logo date code (ywwsss) y last digit of the year ww week sss sequence e b b1 e d l3 l4 l1 b3 a1 a c1 c l package code logo
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70 ywwsss) y
|
